PHT6NQ10T |
RFQ for PHT6NQ10T Required Field |
 |
| Technical/Catalog Information | PHT6NQ10T,135 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 6.5A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 3A, 10V |
| Input Capacitance (Ciss) @ Vds | 633pF @ 25V |
| Power - Max | 8.3W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 21nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Standard |
| Drawing Number | 568; SOT223; ; |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PHT6NQ10T,135 PHT6NQ10T,135 |
| Product | Manufacturers | Pack | D/C |
| PHT6NQ10T | - | SOT223 | `07+(pb-free) |
N-channel enhancement mode field-effect transistor in a plastic envelope using 'trench' technology
Typical Application |
Features |
| • Motor and relay drivers • d.c. to d.c. converters | • 'Trench' technology• Low on-state resistance • Fast switching• Low thermal resistance |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VDS | Drain-source voltage | - | 100 | V | |
| VDGR | Drain-gate voltage | RGS = 20 k | - | 100 | V |
| VGS | Gate-source voltage | - | - | ± 20 | V |
| ID | Continuous drain current (dc) | Tsp = 25 °C Tamb = 25 °C | - | 6.5 3 | A A |
| ID | Continuous drain current (dc) | Tsp = 100 °C Tamb =100 °C | - | 4.1 1.9 | A A |
| IDM | Pulsed drain current |
- | 26 | A | |
| PD | Total power dissipation | Tsp = 25 °C Tamb=25 °C | - | 8.3 1.8 | W W |
| Tj Tstg | operating temperature and Storage temperature | -55 | 150 | °C |
